Light-emitting element, light-emitting element unit, and light-emitting element package

ABSTRACT

In a light-emitting element  1 , a light-emitting layer  4 , a second conductivity type semiconductor layer  5 , a transparent electrode layer  6 , a reflecting electrode layer  7  and an insulating layer  8  are stacked in this order on a first conductivity type semiconductor layer  3 , while a first electrode layer  10  and a second electrode layer  12  are stacked on the insulating layer  8  in an isolated state. The light-emitting element  1  includes a plurality of insulating tube layers  9 , discretely arranged in plan view, passing through the reflecting electrode layer  7 , the transparent electrode layer  6 , the second conductivity type semiconductor layer  5  and the light-emitting layer  4  continuously from the insulating layer  8  and reaching the first conductivity type semiconductor layer  3 , first contacts  11 , continuous from the first electrode layer  10 , connected to the first conductivity type semiconductor layer  3  through the insulating layer  8  and the insulating tube layers  9 , and second contacts  13 , continuous from the second electrode layer  12 , passing through the insulating layer  8  to be connected to the reflecting electrode layer  7.

TECHNICAL FIELD

The present invention relates to a light-emitting element, alight-emitting element unit including the same and a light-emittingelement package prepared by covering a light-emitting element unit witha resin package.

BACKGROUND ART

A semiconductor light-emitting element related to one prior art isdisclosed in Patent Document 1. In the semiconductor light-emittingelement, an n-GaN layer is stacked stacked on a sapphire substrate fromwhich light is extracted. A light-emitting layer is stacked on the n-GaNlayer, and a p-GaN layer, a reflecting electrode, a p electrode, abarrier layer and an AuSn layer are further stacked on thelight-emitting light-emitting layer, in this order from the side of thesapphire sapphire substrate. On the other hand, end regions of the p-GaNp-GaN layer and the light-emitting layer are partially removed so thatan end region of the n-GaN layer is exposed, and an n electrode isstacked on the exposed end region of the n-GaN layer in a state isolatedfrom the light-emitting layer. A barrier layer and an AuSn layer arestacked on the n electrode, in this order from the side of the sapphiresubstrate. The respective ones of the AuSn layer on the n electrode andthe AuSn layer on the p electrode are bonded to a wiring board.

When voltage is applied between the n electrode and the p electrode inthis state, light is generated from the light-emitting layer andextracted from the sapphire substrate.

PRIOR ART Patent Document

-   Patent Document 1: Japanese Unexamined Patent Publication No.    2008-263130

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

In the structure directly stacking the n electrode on the n-GaN layer asin the semiconductor light-emitting element according to Patent Document1, a contact portion must be enlarged in order to reduce contactresistance between the n electrode and the n-GaN layer. Therefore, aspace for arranging the n electrode on the n-GaN layer must be ensuredwith a certain extent of width. Thus, a region where the light-emittinglayer is arrangeable is corroded and narrowed. Therefore, thelight-emitting layer cannot be enlarged, and hence it is difficult toattain improvement of luminous efficiency.

According to a study made by the inventors, further, current is about toflow through the shortest route between the p electrode an the nelectrode, and hence the current cannot be sufficiently dispersed in thestructure according to Patent Document 1 in which the n electrode isformed on the end region. Therefore, only a region in the vicinity ofthe n electrode emits light, and the entire light-emitting layer cannotbe uniformly brightened.

In order to solve the problem, the inventors have studied a structure ofan exposed n-type semiconductor layer having an end region and aplurality of branch portions extending from the end region and an nelectrode arranged thereon.

However, it has been recognized that a light-emitting layer is furthercorroded due to arrangement of branch portions of the n electrode, thearea of the light-emitting layer lessens and luminous efficiencydeteriorates in such an electrode structure. More specifically, currentdensity in the light-emitting layer rises following the area reductionof the light-emitting layer, and hence a loss takes place in lightoutput due to a droop phenomenon. The droop phenomenon denotes such aphenomenon that a radiative recombination probability lowers due to heatgeneration resulting from current concentration and internal luminousefficiency deteriorates.

Accordingly, the present invention provides a light-emitting elementcapable of attaining improvement of luminous efficiency by overcomingthe aforementioned technical problems, a light-emitting element unitincluding the same and a light-emitting element package prepared bycovering a light-emitting element unit with a resin package.

Means for Solving the Problems

A light-emitting element according to the present invention includes afirst conductivity type semiconductor layer (a semiconductor layer of afirst conductivity type), a light-emitting layer stacked on the firstconductivity type semiconductor layer, a second conductivity typesemiconductor layer (a semiconductor layer of a second conductivity typedifferent from the first conductivity type) stacked on thelight-emitting layer, a transparent electrode layer, stacked on thesecond conductivity type semiconductor layer, transparent with respectto the emission wavelength of the light-emitting layer, a reflectingelectrode layer, stacked on the transparent electrode layer, reflectinglight transmitted through the transparent electrode layer, an insulatinglayer stacked on the reflecting electrode layer, a first electrode layerstacked on the insulating layer, a second electrode layer stacked on theinsulating layer in a state isolated from the first electrode layer, aplurality of insulating tube layers, discretely arranged in plan view asviewed from the thickness direction of the first conductivity typesemiconductor layer, passing through the reflecting electrode layer, thetransparent electrode layer, the second conductivity type semiconductorlayer and the light-emitting layer continuously from the insulatinglayer and reaching the first conductivity type semiconductor layer,first contacts, continuous from the first electrode layer, connected tothe first conductivity type semiconductor layer through the insulatinglayer and the insulating tube layers, and second contacts, continuousfrom the second electrode layer, passing through the insulating layer tobe connected to the reflecting electrode layer (claim 1).

Specifically, the wording “transparent with respect to the emissionwavelength” denotes a case where the transmittance of the emissionwavelength is not less than 60%, for example.

According to the structure, the first electrode layer on the insulatinglayer is connected to the first conductivity type semiconductor layerseparated through the insulating layer, the reflecting electrode layer,the transparent electrode layer, the second conductivity typesemiconductor layer and the light-emitting layer via the first contacts.The first contacts pass through the insulating tube layers, to beisolated from the reflecting electrode layer, the transparent electrodelayer, the second conductivity type semiconductor layer and thelight-emitting layer. The second electrode layer on the insulating layeris connected to the reflecting electrode layer under the insulatinglayer via the second contacts.

When applying voltage between the first electrode layer and the secondelectrode layer, current can be fed between the second electrode layerand the first electrode layer. Thus, carriers of either electrons orholes are supplied to the light-emitting layer from the second electrodelayer through the second contacts, the reflecting electrode layer, thetransparent electrode layer and the second conductivity typesemiconductor layer, and the other carriers are supplied from the firstelectrode layer to the light-emitting layer through the first contactsand the first conductivity type semiconductor layer. Thus, lightemission resulting from recombination of the carriers takes place in thelight-emission layer. For example, most part of the generated light istransmitted through the first conductivity type semiconductor layer andextracted, while partial light is reflected on the interface between thetransparent electrode layer and the reflecting electrode layer after thesame is successively transmitted through the second conductivity typesemiconductor layer and the transparent electrode layer, and thereafterextracted from the side of the first conductivity type semiconductorlayer.

The plurality of insulating tube layers are discretely arranged in planview, whereby the first contacts passing through the insulating tubelayers are also plurally present, and discretely arranged. While thefirst electrode layer and the first conductivity type semiconductorlayer separate from each other in this case, the same are connected witheach other via the plurality of discretely arranged first contacts,whereby current can be smoothly fed between the first electrode layerand the first conductivity type semiconductor layer to an extent similarto that in a case where the first electrode layer is directly stacked onthe first conductivity type semiconductor layer.

As compared with a contact area between the first electrode layer andthe first conductivity type semiconductor layer in the case where thefirst electrode layer is directly stacked on the first conductivity typesemiconductor layer, contact areas between the plurality of discretelyarranged first contacts and the first conductivity type semiconductorlayer can be suppressed small. This is because the first contacts are sodiscretely arranged that light can be efficiently emitted over a widerange by easily dispersing current in a wide area range even if thetotal contact areas are small. Thus, a region of the first conductivitytype semiconductor layer for arranging the light-emitting layer can beinhibited from being corroded by a structure for connecting the firstelectrode layer and the first conductivity type semiconductor layer witheach other.

In the light-emitting element, therefore, the area of the light-emittinglayer can be enlarged, whereby current density in the light-emittinglayer can be suppressed, and improvement of luminous efficiency can beattained in response thereto.

Preferably, the plurality of first contacts are uniformly dispersivelyarranged in the plan view (claim 2). According to the structure, contactportions between the first contacts and the first conductivity typesemiconductor are uniformly distributed over a wide range in the firstconductivity type semiconductor layer, whereby current uniformly spreadsover a wide range in the light-emitting layer. Thus, the number oflucent portions in the light-emitting layer can be further increased,whereby further improvement of the luminous efficiency of thelight-emitting element can be attained. In addition, carriers can besmoothly supplied from the first electrode layer to the firstconductivity type semiconductor layer through the contact portionsuniformly distributed over a wide range.

Preferably, the plurality of first contacts are so arranged that theinterval between one first contact and another first contact closest tothe first contact is constant, in order to uniformly dispersivelyarrange the plurality of first contacts in the plan view (claim 3). Atthis time, the interval is preferably not less than 50 μm and not morethan 150 μm (claim 4).

Preferably, the plurality of first contacts are arranged in the form ofa matrix (claim 5).

Preferably, the plurality of first contacts are arranged to bepoint-symmetrical with respect to the location of the center of gravityof the first electrode layer in the plan view (claim 6).

Preferably, the plurality of first contacts include a first edge-sidecontact arranged along an edge of the first electrode layer in the planview (claim 7). According to the structure, the contact portions arearranged at least on the edge side in the first semiconductor layer, inresponse to the first edge-side contact. Thus, current can be spread upto the edge side in the light-emitting layer on the first conductivitytype semiconductor layer. Therefore, the number of lucent portions inthe light-emitting layer can be increased, whereby improvement of theluminous efficiency of the light-emitting element can be attained.

Preferably, the plurality of first contacts include a second edge-sidecontact arranged along an edge of the first electrode layer opposite tothe side of the second electrode layer in the plan view (claim 8).According to the structure, the contact portions are arranged at leaston the side of the edge opposite to the side of the second electrodelayer in the first conductivity type semiconductor layer, in response tothe second edge-side contact. Thus, current can be spread up to the sideof the edge opposite to the side of the second electrode layer in thelight-emitting layer on the first conductivity type semiconductor layer.Therefore, the number of lucent portions in the light-emitting layer canbe increased, whereby improvement of the luminous efficiency of thelight-emitting element can be attained.

Preferably, contact portions of the first contacts with respect to thefirst conductivity type semiconductor layer have circular shapes (claim9). According to the structure, carriers can be isotropically suppliedfrom the whole peripheries of the circular shapes on the contactportions of the first contacts. Thus, the carriers can be smoothlysupplied from the first contacts to the first conductivity typesemiconductor layer.

Preferably in this case, the diameter of the contact portions is notless than 20 μm and not more than 40 μm (claim 10).

Preferably, the first contacts have columnar shapes (claim 11).

Preferably, the sum of the areas of the contact portions of all firstcontacts with respect to the first conductivity type semiconductor layeris not less than 3000 μm² and not more than 25000 μm² (claim 12).According to this structure, improvement of the luminous efficiency canbe attained in the light-emitting element, while lowering forwardvoltage.

Preferably, the insulating layer is made of SiN (claim 13).

Preferably, the reflecting electrode layer is made of an alloycontaining silver, a platinum group metal and copper (claim 14).Preferably, the platinum group metal is platinum or palladium (claim15).

Preferably, the transparent electrode layer is made of ITO (indium tinoxide) (claim 16).

Preferably, the first electrode layer includes a second reflectingelectrode layer, in contact with the insulating layer and having thefirst contacts, reflecting light transmitted through the insulatinglayer (claim 17). According to the structure, light-reflectingefficiency can be improved by reflecting light not reflected on thereflecting electrode layer (a first reflecting electrode layer) stackedon the transparent electrode layer but transmitted through theinsulating layer by the second reflecting electrode layer, wherebyimprovement of the luminous efficiency of the light-emitting element canbe attained.

Preferably, the second reflecting electrode layer is made of Al (claim18).

Preferably, the light-emitting element further includes a substrate,transparent with respect to the emission wavelength of thelight-emitting layer, on which the first conductivity type semiconductorlayer is stacked (claim 19). In the light-emitting element, light isextracted from the substrate when the light-emitting layer emits thelight.

Preferably, the first conductivity type semiconductor layer and thesecond conductivity type semiconductor layer are made of nitridesemiconductors (claim 20).

Preferably, the insulating layer covers an end surface of thelight-emitting layer exposed from between the first conductivity typesemiconductor layer and the second conductivity type semiconductor layer(claim 21). Thus, the end surface of the light-emitting layer can beprotected. Further, light can be prevented from leaking from the endsurface of the light-emitting layer when the light-emitting layer emitsthe light, whereby improvement of the luminous efficiency of thelight-emitting element can be attained.

Preferably, the light-emitting element further includes an etchingstopper layer, stacked on the reflecting electrode layer, arrangedbetween the reflecting electrode layer and the second contacts (Claim22). According to the structure, etching is stopped on the etchingstopper layer when forming trenches for arranging the second contacts onthe insulating layer by the etching, whereby the reflecting electrodelayer can be prevented from being corroded.

Preferably, the light-emitting element further includes bonding layersstacked on the respective ones of the first electrode layer and thesecond electrode layer (Claim 23). Preferably, the bonding layers aremade of AuSn (claim 24). Thus, a light-emitting element unit includingthe light-emitting element and a submount bonded to the bonding layersis constituted (claim 25), and voltage can be applied from the submountto the light-emitting element.

Further, a light-emitting element package including the light-emittingelement unit and a resin package storing the light-emitting element unitcan be constituted (claim 26).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view of a light-emitting element according toone embodiment of the present invention.

FIG. 2 is a sectional view taken along a cutting plane line II-II inFIG. 1.

FIG. 3 is a sectional view taken along a cutting plane line III-III inFIG. 1.

FIG. 4 is a schematic perspective view of the light-emitting element.

FIG. 5A is an illustrative sectional view showing a method ofmanufacturing the light-emitting element shown in FIG. 2.

FIG. 5B is an illustrative sectional view showing a step subsequent toFIG. 5A.

FIG. 5C is an illustrative sectional view showing a step subsequent toFIG. 5B.

FIG. 5D is an illustrative sectional view showing a step subsequent toFIG. 5C.

FIG. 5E is an illustrative sectional view showing a step subsequent toFIG. 5D.

FIG. 5F is an illustrative sectional view showing a step subsequent toFIG. 5E.

FIG. 5G is an illustrative sectional view showing a step subsequent toFIG. 5F.

FIG. 5H is an illustrative sectional view showing a step subsequent toFIG. 5G.

FIG. 6 is a sectional view illustratively showing the structure of asubmount.

FIG. 7 is a schematic plan view of the submount.

FIG. 8A is a sectional view illustratively showing the structure of alight-emitting device.

FIG. 8B is an illustrative perspective view showing a structural exampleof the light-emitting device.

FIG. 9 is a schematic perspective view of a light-emitting elementpackage.

FIG. 10 is a graph showing the relation between current density andlight output.

FIG. 11 is a graph showing the relation between the current density andluminous efficiency.

FIG. 12 is a graph showing the relation between a total first contactarea and forward voltage (VF).

FIG. 13 is a graph showing the relation between the total first contactarea and the luminous efficiency.

FIG. 14 is a schematic plan view of a light-emitting element accordingto a first modification.

FIG. 15 is a schematic plan view of a light-emitting element accordingto a second modification.

MODES FOR CARRYING OUT THE INVENTION

An embodiment of the present invention is now described in detail withreference to the attached drawings.

FIG. 1 is a schematic plan view of a light-emitting element 1 accordingto one embodiment of the present invention. FIG. 2 is a sectional viewtaken along a cutting plane line II-II in FIG. 1. FIG. 3 is a sectionalview taken along a cutting plane line III-III in FIG. 1. FIG. 4 is aschematic perspective view of the light-emitting element 1.

The light-emitting element 1 includes a substrate 2, a firstconductivity type semiconductor layer 3, alight-emitting layer 4, asecond conductivity type semiconductor layer 5, a transparent electrodelayer 6, a reflecting electrode layer 7, an insulating layer 8,insulating tube layers 9, a first electrode layer 10 (an n-sideelectrode), first contacts 11, a second electrode layer 12 (a p-sideelectrode), second contacts 13, an etching stopper layer 14, barrierlayers 15, and bonding layers 16.

The first conductivity type semiconductor layer 3, the light-emittinglayer 4, the second conductivity type semiconductor layer 5, thetransparent electrode layer 6, the reflecting electrode layer 7 and theinsulating layer 8 are stacked in this order on the substrate 2.

The substrate 2 is made of a material (sapphire, GaN or SiC, forexample) transparent with respect to the emission wavelength (450 nm,for example) of the light-emitting layer 4, and has a prescribedthickness. The substrate 2 is provided in the form of a rectangle havinga longitudinal direction in the right-and-left direction in FIG. 2 andhaving a short-side direction in the depth direction in FIG. 2 in planview as viewed from the thickness direction thereof (see FIG. 1). Thelongitudinal size of the substrate 2 is about 100 μm, for example, andthe short-side size of the substrate 2 is about 500 μm, for example. Inthe substrate 2, the lower surface in FIG. 2 is a front surface 2A, andthe upper surface in FIG. 2 is a rear surface 2B. The front surface 2Ais a light extraction surface from which light is extracted. The rearsurface 2B is a surface of the substrate 2 bonded to the firstconductivity type semiconductor layer 3. A plurality of projections 17protruding toward the side of the first conductivity type semiconductorlayer 3 are formed on the rear surface 2B of the substrate 2. Theplurality of projections 17 are discretely arranged. More specifically,the plurality of projections 17 may be arranged in the form of a matrixat intervals from one another, or may be arranged in a staggered manneron the rear surface 2B of the substrate 2. Each projection 17 may bemade of SiN.

The first conductivity type semiconductor layer 3 is stacked on thesubstrate 2. The first conductivity type semiconductor layer 3 coversthe whole area of the rear surface 2B of the substrate 2. The firstconductivity type semiconductor layer 3 is an n-type semiconductor layeraccording to the embodiment, and more specifically, the same is made ofan n-type nitride semiconductor (GaN, for example), and transparent withrespect to the emission wavelength of the light-emitting layer 4. As tothe first conductivity type semiconductor layer 3, it is assumed thatthe lower surface covering the rear surface 2B of the substrate 2 inFIG. 2 is referred to as a front surface 3A, and the upper surfaceopposite to the front surface 3A is referred to as a rear surface 3B.Stepped portions 3C concaved toward the side of the front surface 3A areformed on end portions of the rear surface 3B of the first conductivitytype semiconductor layer 3 in plan view as viewed from the thicknessdirection of the substrate 2 (also the thickness direction of the firstconductivity type semiconductor layer 3).

The light-emitting layer 4 is stacked on the first conductivity typesemiconductor layer 3. The light-emitting layer 4 covers the whole area,excluding the stepped portions 3C, of the rear surface 3B of the firstconductivity type semiconductor layer 3. The light-emitting layer 4 ismade of a nitride semiconductor (InGaN, for example) containing Inaccording to the embodiment, and the thickness thereof is about 100 nm,for example. The emission wavelength of the light-emitting layer 4 is440 nm to 460 nm, for example.

The second conductivity type semiconductor layer 5 is stacked on thelight-emitting layer 4 in the same pattern as the light-emitting layer4. In plan view, therefore, the region of the second conductivity typesemiconductor layer 5 coincides with the region of the light-emittinglayer 4. The second conductivity type semiconductor layer 5 is a p-typesemiconductor layer according to the embodiment, and more specifically,the same is made of a p-type nitride semiconductor (GaN, for example),and transparent with respect to the emission wavelength of thelight-emitting layer 4. Thus, a light-emitting diode structure holdingthe light-emitting layer 4 with the first conductivity typesemiconductor layer 3 which is an n-type semiconductor layer and thesecond conductivity type semiconductor layer 5 which is a p-typesemiconductor layer is formed. The thickness of the second conductivitytype semiconductor layer 5 is about 200 nm, for example. In this case,the total thickness of the first conductivity type semiconductor layer3, the light-emitting layer 4 and the second conductivity typesemiconductor layer 5 is about 4.5 μm, for example.

The transparent electrode layer 6 is stacked on the second conductivitytype semiconductor layer 5 in the same pattern as the secondconductivity type semiconductor layer 5. The transparent electrode layer6 is made of ZnO (zinc oxide) or ITO (indium tin oxide), and transparentwith respect to the emission wavelength of the light-emitting layer 4.According to the embodiment, the transparent electrode layer 6 is madeof ITO.

The reflecting electrode layer 7 is stacked on the transparent electrodelayer 6 in the same pattern as the transparent electrode layer 6. Thereflecting electrode layer 7 is made of an alloy containing silver, aplatinum group metal and copper. Platinum or palladium can be employedas the platinum group metal. As to the compounding ratios of therespective metals, that of silver is about 98%, and that of each of theplatinum group metal and copper is about 1%. The reflecting electrodelayer 7 made of such an alloy is excellent in conductivity.

The insulating layer 8 is stacked on the reflecting electrode layer 7.Extensional portions 8A extending toward the side of the substrate 2 areintegrally provided on end portions of the insulating layer 8 in planview. The extensional portions 8A are parts of the insulating layer 8.The extensional portions 8A cover outer end surfaces of the respectiveones of the light-emitting layer 4, the second conductivity typesemiconductor layer 5, the transparent electrode layer 6 and thereflecting electrode layer 7 in plan view and the stepped portions 3C ofthe first conductivity type semiconductor layer over the whole areas.The outer end surfaces of the light-emitting layer 4 are end surfaces 4Aof the light-emitting layer 4 exposed from between the firstconductivity type semiconductor layer 3 and the second conductivity typesemiconductor layer 5. The insulating layer 8 and the extensionalportions 8A are made of an insulating material (SiN, for example).

The insulating tube layers 9 are made of an insulating material (thesame material as the insulating layer 8 in this case). The insulatingtube layers 9 are tubular layers continuous from the insulating layer 8and extending toward the side of the substrate 2 along the thicknessdirection of the substrate 2. According to the embodiment, theinsulating tube layers 9 are in the form of linear circular tubes, andthe outer diameter thereof is not less than 30 μm and not more than 50μm, while the thickness thereof is about 10 μm to 20 μm. The insulatingtube layers 9 pass through the reflecting electrode layer 7, thetransparent electrode layer 6, the second conductivity typesemiconductor layer 5 and the light-emitting layer 4, and reach anintermediate portion of the thickness of the first conductivity typesemiconductor layer 3.

The insulating tube layers 9 are plurally provided, and the plurality ofinsulating tube layers 9 are discretely arranged in plan view. Morespecifically, the plurality of insulating tube layers 9 are uniformlydispersively arranged in plan view.

Referring to FIG. 1, the plurality of insulating tube layers 9 arearranged along the respective ones of first array lines A extending in afirst direction X parallel to the major surface of the substrate 2 andsecond array lines B extending in a second direction Y intersecting withthe first direction X and parallel to the major surface of the substrate2. According to the embodiment, the number of the insulating tube layers9 is 15, and the insulating tube layers 9 are arranged in the form of amatrix with three rows and five columns. In this case, the firstdirection X (the row direction) coincides with the short-side directionof the substrate 2, the second direction Y (the column direction)coincides with the longitudinal direction of the substrate 2, and thefirst array lines A (the first direction X) and the second array lines B(the second direction Y) are orthogonal to one another. Three insulatingtube layers 9 are arrayed on each first array line A at regularintervals, and five insulating tube layers 9 are arrayed on each secondarray line B at regular intervals.

The first array lines A and the second array lines B pass through thecircle centers of the insulating tube layers 9 in the form of circulartubes. Therefore, the interval between the insulating tube layers 9adjacent to each other on each first array line A corresponds to theinterval C between the second array lines B parallelly extendingadjacently to each other. Further, the interval between the insulatingtube layers 9 adjacent to each other on each second array line Bcorresponds to the interval D between the extending first array lines Aparallelly extending adjacently to each other.

Consider third array lines E incliningly extending with respect to thefirst array lines A as well as the second array lines B in a planeparallel to the major surface of the substrate 2. The third array linesE are present on the adjacent first array lines A, and pass through thecircle centers of the insulating tube layers 9 present on the adjacentsecond array lines B. When the intervals C and D are equal to eachother, the third array lines E extend while inclining at 45° withrespect to the first array lines A as well as the second array lines B,and a plurality of insulating tube layers 9 line up on each third arrayline E at regular intervals F. Thus, the plurality of insulating tubelayers 9 are so arrayed on the respective ones of the first array linesA, the second array lines B and the third array lines E that theinterval (the intervals C, D and F) between one insulating tube layer 9and the insulating tube layer 9 closest to the insulating tube layer 9is constant. In the case where the insulating tube layers 9 are arrangedin the form of a matrix as in the embodiment, the interval F is greaterthan the intervals C and D. In the case where the intervals C and D areequal to each other, the interval between one insulating tube layer 9and another insulating tube layer 9 closest thereto is equal to theintervals C and D. The interval C or D (the distance between the closestinsulating tube layers 9) is set to be not less than 50 μm and not morethan 150 μm.

Considering a line segment connecting the circle centers of a pair ofinsulating tube layers 9 adjacent to each other on any third array lineE with each other, the midpoint of the line segment is the point (thefarthest point) farthest from the insulating tube layers 9 present onthe periphery thereof. The plane arrangement of the insulating tubelayers 9 is preferably so designed that the distance between such afarthest point and the insulating tube layer 9 (the first contact 11arranged in the insulating tube layer 9) closest thereto is not morethan 150 μm.

Referring to FIG. 2, the first electrode layer 10 is stacked on a regionof the insulating layer 8 deviating toward the left side in FIG. 2. Thefirst electrode layer 10 is provided in the form of a rectanglelongitudinal in the right-and-left direction in FIGS. 1 and 2 (thelongitudinal direction of the substrate 2) in plan view, occupies aregion of not less than half the insulating layer 8 in plan view, and isin contact with the insulating layer 8 in the region (see FIG. 1). Thefirst electrode layer 10 is made of a conductive material (Al (aluminum)or Ag (silver), for example). The thickness of the first electrode layer10 is not less than 100 nm, and preferably about 350 nm. Referring toFIG. 1, the first electrode layer 10 includes a pair of longitudinaledges 10A extending in the right-and-left direction in FIG. 1 and a pairof short-side edges 10B extending orthogonally to the pair oflongitudinal edges 10A. The longitudinal edges 10A and the short-sideedges 10B are sides defining the outer shape (the contour) of the firstelectrode layer 10 in plan view.

In plan view, one insulating tube layer 9 included in the plurality ofinsulating tube layers 9 is arranged on the location G of the center ofgravity of the rectangular first electrode layer 10, while the remaininginsulating tube layers 9 are arranged to be point-symmetrical withrespect to (the center of symmetry of) the location G of the center ofgravity. The plurality of insulating tube layers 9 include firstedge-side insulating tube layers 9A arranged along the longitudinaledges 10A and the short-side edges 10B of the first electrode layer 10.Referring to FIG. 1, 12 first edge-side insulating tube layers 9Aconstitute a rectangular frame as a whole, and are arranged adjacentlyto outer lines (the longitudinal edges 10A and the short-side edges 10B)of the first electrode layer 10 to edge the outer lines.

The first contacts 11 are made of a conductive material (the samematerial as the first electrode layer 10 in this case). When made of thesame material as the first electrode layer 10, the first contacts 11 maybe integrated with the first electrode layer 10, or may also be regardedas parts of the first electrode layer 10. The first contacts 11 arecontinuous from the first electrode layer 10, and provided in the formof pillars extending toward the side of the substrate 2 along thethickness direction of the substrate 2. According to the embodiment, thefirst contacts 11 are in the form of linear columns. The first contacts11 are plurally provided. According to the embodiment, the firstcontacts 11 are provided in the same number (15) as the insulating tubelayers 9. Each first contact 11 passes through the insulating layer 8,and is embedded in a hollow portion of the corresponding insulating tubelayer 9. In this state, each first contact 11 is connected to the firstconductivity type semiconductor layer 3 through the insulating layer 8and the insulating tube layer 9. The first contacts 11 are isolated fromthe reflecting electrode layer 7, the transparent electrode layer 6, thesecond conductivity type semiconductor layer 5 and the light-emittinglayer 4 bypassing through the insulating tube layers 9. Contact portions18 of the columnar first contacts 11 with respect to the firstconductivity type semiconductor layer 3 have circular shapes. Thediameter of the contact portions 18 may be not less than 20 μm and notmore than 40 μm, for example, and preferably about 30 μm, inconsideration of dimensional errors of the first contacts 11 and errorsin the intervals between the adjacent first contacts 11. When reducingthe diameter of the contact portions 18 below 20 μm, electricalresistance (contact resistance) in the contact portions 18 increases.

The sum of the areas (contact areas) of the contact portions 18 of all(in this case, 15) first contacts 11 is preferably not less than 3000μm² and not more than 25000 μm².

Referring to FIG. 1, the circle centers of the insulating tube layers 9in the form of circular tubes and the circle centers of the columnarfirst contacts 11 embedded in the hollow portions of the insulating tubelayers 9 coincide with one another in plan view. Therefore, theplurality of first contacts 11 are arrayed in the same array pattern asthe plurality of insulating tube layers 9 in plan view. In other words,the plurality of first contacts 11 are arranged on the intersectionpoints between the first array lines A and the second array lines B inplan view, and uniformly dispersively arranged to form a matrix.Further, the plurality of first contacts 11 are so arrayed that theinterval between one first contact 11 and the first contact 11 closestto the first contact 11 is constant at each of the aforementionedintervals C, D and F on each of the first array lines A, the secondarray lines B and the third array lines E. In addition, the plurality offirst contacts 11 are arranged to be point-symmetrical with respect tothe location G of the center of gravity of the first electrode layer 10in plan view. It is assumed that the first contacts 11 embedded insidethe aforementioned first edge-side insulating tube layers 9A arereferred to as first edge-side contacts 11A among the plurality of firstcontacts 11. The first edge-side contacts 11A are arranged along thelongitudinal edges 10A and the short-side edges 10B of the firstelectrode layer 10 in plan view.

Referring to FIG. 2, the second electrode layer 12 is made of the samematerial as the first electrode layer 10 according to the embodiment,and stacked on a region of the insulating layer 8 deviating toward theright side in FIG. 2. The second electrode layer 12 has the samethickness as the first electrode layer 10, although the same is smallerthan the first electrode layer 10 in plan view. The second electrodelayer 12 is longitudinal in a direction (the direction orthogonal to theplane of FIG. 2) orthogonal to the longitudinal direction (theright-and-left direction in FIGS. 1 and 2) of the first electrode layer10 (see FIG. 1). On the insulating layer 8, the first electrode layer 10formed to deviate toward the left side and the second electrode layer 12formed to deviate toward the right side are isolated from each other byseparating from each other at a distance of about 60 μm, for example.

It is assumed that three first edge-side insulating tube layers 9Aarranged along the edge (the left short-side edge 10B in FIG. 1) of thefirst electrode layer 10 opposite to the side of the second electrodelayer 12 in plan view are referred to as second edge-side insulatingtube layers 9B in the aforementioned first edge-side insulating tubelayers 9A. It is also assumed that the first edge-side contacts 11Aembedded inside the three second edge-side insulating tube layers 9B arereferred to as second edge-side contacts 11B among the first edge-sidecontacts 11A embedded inside the first edge-side insulating tube layers9A. The second edge-side contacts 11B are arranged along the leftshort-side edge 10B in plan view.

The second contacts 13 are made of a conductive material (the samematerial as the second electrode layer 12 in this case). The secondcontacts 13 are continuous from the second electrode layer 12, andprovided in the form of pillars extending toward the side of thesubstrate 2 along the thickness direction of the substrate 2. The secondcontacts 13 are plurally (by three in this case) provided. The pluralityof second contacts 13 line up along the longitudinal direction (thedirection orthogonal to the plane of FIG. 2) of the second electrodelayer 12 (see FIG. 1). Each second contact 13 passes through theinsulating layer 8.

The etching stopper layer 14 is stacked on a position of the reflectingelectrode layer 7 coinciding with each second contact 13 in plan view,and formed to be larger than the second contact 13 in plan view. Theetching stopper layer 14 is made of a conductive material, and morespecifically, the same is constituted by stacking Cr (chromium) and Pt(platinum) in this order from the side of the reflecting electrode layer7. The etching stopper layer 14 is held between the reflecting electrodelayer 7 and the second contacts 13. The second contacts 13 are connectedto the reflecting electrode layer 7 through the etching stopper layer14.

The barrier layers 15 are stacked on the first electrode layer 10 in thesame pattern as the first electrode layer 10, and stacked on the secondelectrode layer 12 in the same pattern as the second electrode layer 12.The barrier layers 15 are constituted by stacking Ti (titanium) and Ptin this order from the side of the first electrode layer 10 and thesecond electrode layer 12.

The bonding layers 16 are stacked on the barrier layer 15 present on thefirst electrode layer 10 in the same pattern as the first electrodelayer 10, and stacked on the barrier layer 15 present on the secondelectrode layer 12 in the same pattern as the second electrode layer 12.The bonding layers 16 are made of Ag, Ti or Pt, or an alloy thereof, forexample. The bonding layers 16 may be made of solder or AuSn (gold tin).According to the embodiment, the bonding layers 16 are made of AuSn.Diffusion of Sn (tin) from the bonding layers 16 into the firstelectrode layer 10 and the second electrode layer 12 is suppressed bythe barrier layers 15.

Surfaces of the bonding layers 16 in contact with the barrier layers 15present on the first electrode layer 10 and the second electrode layer12 are lower surfaces, and it is assumed that upper surfaces opposite tothe lower surfaces are referred to as bonding surfaces 16A. Both of thebonding surface 16A of the bonding layer 16 on the side of the firstelectrode layer 10 and the bonding surface 16A of the bonding layer 16on the side of the second electrode layer 12 are planar surfaces, andflush with each other on the same height positions (positions in thethickness direction of the substrate 2). The first electrode layer 10and the second electrode layer 12 are isolated from each other ashereinabove described, whereby the bonding layer 16 on the side of thefirst electrode layer 10 and the bonding layer 16 on the side of thesecond electrode layer 12 are isolated from each other.

A portion of the first conductivity type semiconductor layer 3 excludingthe stepped portions 3C, the light-emitting layer 4, the secondconductivity type semiconductor layer 5, the transparent electrode layer6 and the reflecting electrode layer 7 coincide with one another in planview, and are in the form of rectangles longitudinal in theright-and-left direction (the longitudinal direction of the substrate 2)in FIGS. 1 and 2 (see FIG. 1). The respective ones of the firstconductivity type semiconductor layer 3, the light-emitting layer 4, thesecond conductivity type semiconductor layer 5, the transparentelectrode layer 6 and the reflecting electrode layer 7 are present overthe whole area of the substrate 2 in the longitudinal direction in aregion where the insulating tube layers 9 and the first contacts 11 arenot formed (see FIG. 3). The first electrode layer 10, the secondelectrode layer 12, the barrier layers 15 and the bonding layers 16 arepositioned inside the light-emitting layer 4 (the second conductivitytype semiconductor layer 5, the transparent electrode layer 6 and thereflecting electrode layer 7) in plan view (see FIG. 1).

When applying forward voltage between the first electrode layer 10 andthe second electrode layer 12 in the light-emitting element 1, currentflows from the second electrode layer 12 toward the first electrodelayer 10. The current flows from the second electrode layer 12 towardthe first electrode layer 10 through the second contacts 13, the etchingstopper layer 14 and the reflecting electrode layer 7 in this order. Thereflecting electrode layer 7 is excellent in conductivity, whereby thecurrent spreads over the whole area of the reflecting electrode layer 7in plan view, and thereafter flows through the transparent electrodelayer 6, the second conductivity type semiconductor layer 5, thelight-emitting layer 4, the first conductivity type semiconductor layer3 and the first contacts 12 in this order. The current in this manner,whereby electrons are injected from the first conductivity typesemiconductor layer 3 into the light-emitting layer 4 and holes areinjected from the second conductivity type semiconductor layer 5 intothe light-emitting layer 4, and the holes and the electrons are sorecombined with one another in the light-emitting layer 4 that bluelight of 440 nm to 460 nm in wavelength is generated. The light istransmitted through the first conductivity type semiconductor layer 3and the substrate 2 in this order and extracted from the front surface2A of the substrate 2.

At this time, there is also present light directed from thelight-emitting layer 4 toward the side of the second conductivity typesemiconductor layer 5, and the light is transmitted through the secondconductivity type semiconductor layer 5 and the transparent electrodelayer 6 in this order, and reflected on the interface between thetransparent electrode layer 6 and the reflecting electrode layer 7. Thereflected light is transmitted through the transparent electrode layer6, the second conductivity type semiconductor layer 5, thelight-emitting layer 4, the first conductivity type semiconductor layer3 and the substrate 2 in this order and extracted from the front surface2A of the substrate 2.

There is also present light not reflected on the reflecting electrodelayer 7 but advancing in the insulating tube layers 9, and the light istransmitted through the insulating tube layers 9 and the insulatinglayer 8, and reflected on the interfaces between the insulating layer 8and the first and second electrode layers 10 and 12. The reflected lightis transmitted through the insulating layer 8, the insulating tubelayers 9, the transparent electrode layer 6, the second conductivitytype semiconductor layer 5, the light-emitting layer 4, the firstconductivity type semiconductor layer 3 and the substrate 2 andextracted from the front surface 2A of the substrate 2. In other words,the light-emitting element 1 includes the first electrode layer 10 andthe second electrode layer 12 as second reflecting electrode layers, inaddition to the reflecting electrode layer 7 as a first reflectingelectrode layer. The thicknesses of the first and second electrodelayers 10 and 12 must be not less than 100 nm, so that the first andsecond electrode layers 10 and 12 have functions as the reflectingelectrode layers.

As hereinabove described, the plurality of projections 17 are formed onthe rear surface 2B of the substrate 2. Light introduced into the rearsurface 2B of the substrate 2 at various angles from the side of thefirst conductivity type semiconductor layer 3 toward the substrate 2 canbe inhibited from being totally reflected on the rear surface 2B of thesubstrate 2, due to the projections 17. Thus, the light directed towardthe substrate 2 from the first conductivity type semiconductor layer 3is inhibited from being reflected toward the side of the firstconductivity type semiconductor layer on the interface between the firstconductivity type semiconductor layer 3 and the substrate 2. In otherwords, light extraction efficiency is improved.

FIGS. 5A to 5H are illustrative sectional views showing a method ofmanufacturing the light-emitting element shown in FIG. 2.

First, a layer (an SiN layer) made of SiN is formed on the rear surface2B of the substrate 2, and the SiN layer is separated into the pluralityof projections 17 by etching employing a resist pattern (not shown) as amask, as shown in FIG. 5A. Then, treatment of epitaxially growing asemiconductor layer on the rear surface 2B of the substrate 2 isperformed by arranging the substrate 2 in a reaction vessel (not shown)and feeding gas (silane gas or the like) into the reaction vessel. Atthis time, the first conductivity type semiconductor layer 3, thelight-emitting layer 4 and the second conductivity type semiconductorlayer 5 can be continuously formed on the rear surface 2B of thesubstrate 2 in this order by varying the flow ratio of the gas.

Then, the transparent electrode layer 6 is pattern-formed by a lift-offmethod, for example, as shown in FIG. 5B. The transparent electrodelayer 6 is formed on positions coinciding with the respective insulatingtube layers 9 (see FIGS. 1 and 2) in a pattern having through-holes 19passing through the transparent electrode layer 6, and it follows thatthe second conductivity type semiconductor layer 5 is exposed from eachthrough-hole 19.

Then, a layer (an alloy layer) of an alloy containing silver, a platinumgroup metal and copper is formed on the transparent electrode layer 6and the whole area of the portion of the second conductivity typesemiconductor layer 5 exposed from each through-hole 19, and dry etchingemploying a resist pattern 20 of the same pattern as the transparentelectrode 6 as a mask is performed on the alloy layer, as shown in FIG.5C. Thus, the alloy layer is selectively removed, while the remainingalloy layer turns into the reflecting electrode layer 7, and is formedon the transparent electrode layer 6 in the same pattern as thetransparent electrode layer 6. Through-holes 21 identical in size to thethrough-holes 19 are formed in the reflecting electrode layer 7 onpositions coinciding with the respective through-holes 19 of thetransparent electrode layer 6 in plan view.

Then, another resist pattern 22 is formed on the reflecting electrodelayer 7 after removing the resist pattern 20, as shown in FIG. 5D.Openings 23 identical in size to the through-holes 21 are formed in theresist pattern 22 on positions coinciding with the respectivethrough-holes 21 of the reflecting electrode layer 7 in plan view. Theopenings 23 are continuous with the through-holes 19 and 21 present onthe same positions in plan view. The resist pattern 22 is not present onportions where the stepped portions 3C of the first conductivity typesemiconductor layer 3 are expected to be positioned in plan view.

Then, the respective ones of the reflecting electrode layer 7, thetransparent electrode layer 6, the second conductivity typesemiconductor layer 5, the light-emitting layer 4 and the firstconductivity type semiconductor layer 3 are selectively removed by dryetching employing the resist pattern 22 as a mask. Thus, trenches 24(cylindrical trenches according to the embodiment) passing through thesecond conductivity type semiconductor layer 5 and the light-emittinglayer 4 to reach intermediate portions of the thickness of the firstconductivity type semiconductor layer 3 are formed on positionscoinciding with the respective openings 23 of the resist pattern 22 inplan view, and the stepped portions 3C are formed on the firstconductivity type semiconductor layer 3. Each trench 24 is continuouswith the opening 23 and the through-holes 19 and 21 present on the sameposition in plan view. The through-holes 19 and 21 and the trench 24continuous with one another on the same position in plan view constituteone trench 25. Such trenches 25 are formed on a plurality of (in thiscase, 15) dispersed positions coinciding with the insulating tube layers9 in plan view. The respective trenches 25 are in the form of cylinderslinearly extending in the thickness direction of the substrate 2according to the embodiment, and circular shapes of sections thereof areidentical in size to one another on any position in the thicknessdirection of the substrate 2. The respective trenches 25 pass throughthe reflecting electrode layer 7, the transparent electrode layer 6, thesecond conductivity type semiconductor layer 5 and the light-emittinglayer 4, and reach intermediate portions of the thickness of the firstconductivity type semiconductor layer 3. The depth (the dimension in thethickness direction of the substrate 2) of the trenches 25 from thesemiconductor layer surface (the front surface of the secondconductivity type semiconductor layer 5) is about 1.5 μm, for example.Portions (see FIG. 5C) of the respective ones of the reflectingelectrode layer 7, the transparent electrode layer 6, the secondconductivity type semiconductor layer 5 and the light-emitting layer 4coinciding with the stepped portions 3C in plan view have been removedat the same time with the formation of the trenches 25 by the dryetching.

Then, the etching stopper layer 14 is formed on positions of thereflecting electrode layer 7 expected to coincide with the secondcontacts 13 (see FIG. 2) in plan view by the lift-off method, forexample, after removing the resist pattern 22, as shown in FIG. 5E.

Then, a layer (an SiN layer) 26 made of SiN is formed on the reflectingelectrode layer 7 and the etching stopper layer 14 by CVD, for example,as shown in FIG. 5F. The SiN layer 26 is formed to fill up therespective trenches 25 and to cover the outer end surfaces of therespective ones of the light-emitting layer 4, the second conductivitytype semiconductor layer 5, the transparent electrode layer 6 and thereflecting electrode layer 7 in plan view and the stepped portions 3C ofthe first conductivity type semiconductor layer 3 over the whole areas.In the SiN layer 26, the portion present on the reflecting electrodelayer 7 and the etching stopper layer 14 turns into the insulating layer8, and the portions covering the outer end surfaces of the respectiveones of the light-emitting layer 4, the second conductivity typesemiconductor layer 5, the transparent electrode layer 6 and thereflecting electrode layer 7 in plan view and the stepped portions 3C ofthe first conductivity type semiconductor layer 3 turn into theextensional portions 8A. It follows that the portions of the SiN layer26 embedded in the trenches 25 form the insulating tube layers 9.

Then, a resist pattern 27 is formed on the insulating layer 8, as shownin FIG. 5G. In the resist pattern 27, openings are formed on positionsexpected to coincide with the respective first contacts 11 (see FIG. 2)in plan view, and openings 29 are formed on positions expected tocoincide with the respective second contacts 13 (see FIG. 2) in planview.

Then, the insulating layer 8 and the SiN layer 26 in the respectivetrenches 25 are selectively removed by dry etching employing the resistpattern 27 as a mask. Thus, the insulating layer 8 and the SiN layer 26on positions coinciding with the respective openings 28 of the resistpattern 27 in plan view are removed from the side of the resist pattern27. The dry etching is so conditioned that the first conductivity typesemiconductor layer 3 is not etched. Therefore, the etching in therespective openings 28 stops in front of the first conductivity typesemiconductor layer 3 on bottom surfaces of the trenches 25. Thus,trenches 30 passing through the insulating layer 8 and the SiN layer 26and reaching the first conductivity type semiconductor layer 3 areformed on positions coinciding with the respective openings 28 of theresist pattern 22 in plan view.

The trenches 30 are in the form of cylinders extending in the thicknessdirection of the substrate 2, and circular shapes of sections thereofare identical in size to one another over the whole area of thesubstrate 2 in the thickness direction. The trenches 30 are formed inthe same number (15 in this case) as the first contacts 11, and eachtrench 30 is arranged inside any trench 25. Each trench 25 reaches anintermediate portion of the thickness of the first conductivity typesemiconductor layer 3, whereby each trench 30 also reaches theintermediate portion of the thickness of the first conductivity typesemiconductor layer 3. The first conductivity type semiconductor layer 3is exposed on the bottom of each trench 30. The trenches 30 are soformed that the SiN layer 26 filling up the respective trenches 25 turnsinto the insulating tube layers 9.

The insulating layer 8 on a position coinciding with each opening 29 ofthe resist pattern 27 in plan view is removed from the side of theresist pattern 27 due to the dry etching at this stage. The etching ineach opening 29 stops on the etching stopper layer 14. In other words,the etching stopper layer 14 protects the reflecting electrode layer 7present immediately under the same from the dry etching, whereby thereflecting electrode layer 7 can be prevented from being etched.Consequently, trenches 31 passing through the insulating layer 8 andreaching the etching stopper layer 14 are formed on positions coincidingwith the respective openings 29 of the resist pattern 27 in plan view.The trenches 31 are formed in the same number (three in this case) asthe second contacts 13, and the trenches 31 line up at regular intervalsin the short-side direction (the direction orthogonal to the plane ofFIG. 5G) of the substrate 2 in plan view.

Then, a layer (an Al layer 32) made of Al is formed on the whole area ofthe insulating layer 8 by vapor deposition, for example, after removingthe resist pattern 27, as shown in FIG. 5H. The Al layer 32 fills up therespective trenches 30 and the respective trenches 31. The Al layer 32in the trenches 30 turns into the first contacts 11, and the Al layer 32in the trenches 31 turns into the second contacts 13.

Then, layers (Ti layers) made of Ti and layers (Pt layers) made of Ptare stacked on the whole area of the Al layer 32 present on theinsulating layer 8 in this order by sputtering, for example. Thus, thebarrier layers 15 consisting of multilayer structures of the Ti layersand the Pt layers are formed on the Al layer 32.

Then, layers (AuSn layers) made of AuSn are formed on the whole areas ofthe barrier layers 15 by electroplating, for example. The AuSn layersare the bonding layers 16.

Then, each of the Al layer 32, the barrier layers 15 and the bondinglayers 16 on the insulating layer 8 is divided into two between eachsecond contact 13 and the first contact 11 closest to the second contact13 in the longitudinal direction of the substrate 2 in plan view (seeFIG. 5H). Thus, a portion of the Al layer 32 on the insulating layer 8covering all first contacts 11 in plan view turns into the firstelectrode layer 10, and a portion covering all second contacts 13 inplan view turns into the second electrode layer 12, as shown in FIG. 2.Consequently, the light-emitting element 1 is completed. The firstelectrode layer 10 and the second electrode layer 12 are formed on theinsulating layer 8 in an isolated state.

A large number of light-emitting elements 1 are simultaneously formed onone wafer (not shown) as an original substrate, for example. When dicingthe wafer after grinding/polishing the wafer and adjusting the thicknessas necessary, therefore, the light-emitting element 1 of the structureshown in FIGS. 1 to 4 is finally individually cut.

The trenches 30 in which the first contacts 11 are embedded havecircular sections identical in size to the first contacts 11, and thediameter (the inner diameter) thereof is not less than 20 μm and notmore than 40 μm. On the other hand, the trenches 31 in which the secondcontacts 13 are embedded are larger than the trenches 30 in plan view(see FIG. 1). When filling up the respective trenches 31 with the Allayer 32 at the time of forming the Al layer 32 on the insulating layer8 (see FIG. 5H) as hereinabove described, therefore, traces 90 of therespective trenches 31 appear on the insulating layer 8 as recesses, andfinally appear also on the bonding surface 16A of the bonding layer 16present on the second electrode 12 (see FIG. 4). However, the pluralityof trenches 31 are at intervals in the short-side direction of thesubstrate 2 (see FIG. 1), whereby the traces 90 of the respectivetrenches 31 are remarkably small and inconspicuous as compared with acase where the trenches 31 link with one another in a line. Therefore,the bonding surface 16A of the bonding layer 16 present on the secondelectrode 12 is almost planarized.

FIG. 6 is a sectional view illustratively showing the structure of asubmount.

As shown with two-dot chain lines in FIG. 6, the light-emitting element1 is bonded to a submount 50 by the bonding layers 16, to constitute alight-emitting element unit 64.

The submount 50 includes abase substrate 51, an insulating layer 52,electrode layers 53, and bonding layers 54.

The base substrate 51 is made of Si, for example. The insulating layer52 is made of SiO₂, for example, and covers the whole area of the frontsurface (the upper surface in FIG. 6) of the base substrate 51.

The electrode layers 53 are made of Al, for example. The electrodelayers 53 are provided on two regions of the insulating layer 52separated from each other, and two electrode layers 53 are formed on theinsulating layer 52 in a horizontally separated state in FIG. 6. It isassumed that the left electrode layer 53 in FIG. 6 is referred to as afirst mount electrode layer 53A and the right electrode layer 53 in FIG.6 is referred to as a second mount electrode layer 53B in the twoelectrode layers 53. The first mount electrode layer 53A and the secondmount electrode layer 53B are arranged to be isolated from each other atan interval generally equal to the interval between the first electrode11 and the second electrode 12, such as an interval of about 60 μm, forexample.

The bonding layers 54 are stacked on the respective electrode layers 53.According to the embodiment, the bonding layers 54 have two-layerstructures including Ti layers 55 on the side of the base substrate 51and Au layers 56 stacked on the Ti layers 55. Surfaces (the uppersurfaces in FIG. 6) of the bonding layers 54 opposite to surfaces incontact with the electrode layers 53 are regarded as front surfaces 54A.The front surfaces 54A are planar surfaces, and the front surfaces 54Aof the bonding layers 54 on the respective electrode layers 53 are flushwith each other.

FIG. 7 is a schematic plan view of the submount. In plan view, thebonding layer 54 on the first mount electrode layer 53A is identical insize to the bonding layer 16 on the first electrode layer 10 of thelight-emitting element 1, and the bonding layer 54 on the second mountelectrode layer 53B is identical in size to the bonding layer 16 on thesecond electrode layer 12 of the light-emitting element 1 (see FIG. 1).

FIG. 8A is a sectional view illustratively showing the structure of alight-emitting device.

Referring to FIG. 8A, a light-emitting device 60 includes thelight-emitting element 1, the submount 50, and a support substrate 61.

The support substrate 61 has an insulating substrate 62 made of aninsulating material and a pair of leads 63, made of a metal, provided tobe exposed from both ends of the insulating substrate 62 forelectrically connecting the light-emitting element 1 and an externalportion with each other. The insulating substrate 62 is provided in theform of a rectangle in plan view, for example, and the pair of leads 63are zonally formed along a pair of opposite sides thereof respectively.The respective leads 63 are folded along a pair of end edges of theinsulating substrate 62 to reach the lower surface from the uppersurface through side surfaces, and formed to have lateral U-shapedsections.

In assembling, the submount 50 is brought into such a posture that thefront surfaces 54A of the bonding layers 54 are upwardly directed asshown in FIG. 8A, for example. Further, the light-emitting element 1shown in FIG. 2 is brought into such a posture (a posture verticallyinverted from that of FIG. 2) that the bonding surfaces 16A of thebonding layers 16 are downwardly directed, and opposed to the submount50 in the posture shown in FIG. 8A from above.

When the light-emitting element 1 is made to approach the submount 50,the bonding surfaces 16A of the bonding layers 16 of the light-emittingelement 1 and the front surfaces 54A of the bonding layers 54 of thesubmount 50 come into surface contact with one another, as shown in FIG.8A. More specifically, the bonding surface 16A of the bonding layer 16on the side of the first electrode layer 10 comes into surface contactwith the front surface 54A of the bonding layer 54 on the side of thefirst mount electrode layer 53A, and the bonding surface 16A of thebonding layer 16 on the side of the second electrode layer 12 comes intosurface contact with the front surface 54A of the bonding layer 54 onthe side of the second mount electrode layer 53B. When performingreflowing (heat treatment) in this state, the first electrode layer 10and the first mount electrode layer 53A are bonded to each other throughthe bonding layers 16 and 54 while the second electrode layer 12 and thesecond mount electrode layer 53B are bonded to each other through thebonding layers 16 and 54, and the light-emitting element 1 isflip-chip-connected to the submount 50. In other words, the bondinglayers 16 and the bonding layers 54 are melted/fixed and bonded to oneanother. Consequently, the light-emitting element unit 64 in which thelight-emitting element 1 and the submount 50 are integrated with eachother is obtained.

As hereinabove described, the traces 90 of the respective trenches 31are present on the bonding surface 16A of the bonding layer 16 providedon the second electrode 12 while the same are extremely small, wherebythe bonding surface 16A is almost planar (see FIG. 4). Therefore, thetraces 90 of the respective trenches 31 do not exert any influence onthe surface contact between the bonding surface 16A and the frontsurface 54A of the bonding layer 54 on the side of the second mountelectrode layer 53B, and the bonding surface 16A and the front surface54A are in surface contact with each other generally over the wholeareas. Further, the first electrode layer 10 and the second electrodelayer 12 on the side of the light-emitting element 1 separate from eachother at the sufficient distance of about 60 μm, and the first mountelectrode layer 53A and the second mount electrode layer 53B on the sideof the submount 50 similarly separate from each other at a sufficientdistance. Even if a small number of mounting errors are present,therefore, neither the first electrode layer 10 is connected to thesecond mount electrode layer 53B nor the second electrode layer 12 isconnected to the first mount electrode layer 53A, whereby thelight-emitting element 1 can be reliably flip-chip-connected to thesubmount 50.

The light-emitting element unit 64 is bonded to the insulating substrate62 while opposing the base substrate 51 of the submount 50 to onesurface of the insulating substrate 62. Then, the first mount electrodelayer 53A connected to the first electrode layer 10 and the lead 63 onthe side of the first mount electrode layer 53A are connected with eachother by a bonding wire 65. Further, the second mount electrode layer53B connected to the second electrode layer 12 and the lead 63 on theside of the second mount electrode layer 53B are connected with eachother by a bonding wire 65. Thus, the light-emitting unit 64 and thesupport substrate 61 are integrated with each other to complete thelight-emitting device 60.

As an illustrative perspective view is shown in FIG. 8B, the supportsubstrate 61 may be elongationally (zonally) formed, and a plurality oflight-emitting element units 64 may be mounted on a surface of such anelongational support substrate to constitute an LED (light-emittingdiode) bar. A light-emitting device 60 in which a plurality oflight-emitting element units 64 are linearly arrayed in a line on onesurface of the support substrate 61 is shown in FIG. 8B. Such alight-emitting device 60 can be employed as a light source for abacklight of a liquid crystal display, for example. The plurality oflight-emitting element units 64 on the support substrate 61 may notnecessarily be linearly arrayed in a line, but may be arrayed in twolines, or may be arrayed in a staggered manner. Further, sealing resincontaining a fluorescent material may be potted onto each light-emittingelement unit 64.

FIG. 9 is a schematic perspective view of a light-emitting elementpackage employing the light-emitting element unit 64.

A light-emitting element package 70 includes the light-emitting device60 of the structure shown in FIG. 8A, a resin package 71 and sealingresin 72.

The resin package 71 is a ring-shaped case filled with resin, and fixedto the support substrate 61 in a state storing (covering) thelight-emitting element unit 64 on the inner side thereof whilesurrounding and protecting the same from side portions. Inner wallsurfaces of the resin package 71 form reflecting surfaces 71 a forreflecting light emitted from the light-emitting element 1 of thelight-emitting element unit 64 and extracting the same outward.According to the embodiment, the reflecting surfaces 71 a consist ofinclining surfaces inclining to approach the support substrate 61inward, and are formed to reflect the light from the light-emittingelement 1 toward a light extraction direction (the normal direction ofthe substrate 2).

The sealing resin 72 is made of transparent resin (silicone or epoxy,for example) transparent with respect to the emission wavelength of thelight-emitting element 1, and seals the light-emitting element 1 and thebonding wires 65 etc. Alternatively, a fluorescent material may be mixedinto the transparent resin. When the light-emitting device 60 emits bluelight and a material emitting yellow light is arranged as thefluorescent material, spontaneous emission is obtained.

While the structure in which one light-emitting element unit 64 ismounted on the support substrate 61 is shown in FIG. 9, a plurality oflight-emitting element units 64 may be mounted in common on the supportsubstrate 61, and the same may be sealed in common by the sealing resin72, as a matter of course.

FIG. 10 is a graph showing the relation between current density andlight output in a light-emitting diode.

Referring to FIG. 10, it is theoretically expected in the light-emittingdiode that the light output linearly increases when the current densityascends (a theoretic line of a broken line in FIG. 10). In practice,however, the so-called droop phenomenon takes place to cause loss in thelight output when the current density ascends, and hence the lightoutput is along a characteristic line (a solid line in FIG. 10)deviating downward (a descending side) from the theoretic line.

The loss of the light output must be reduced in order to improveluminous efficiency by setting current applied to the light-emittingelement 1 constant, and hence the current density must be relaxed(lowered) for that purpose. While it is effective to enlarge thelight-emitting layer 4 in plan view shown in FIG. 1 in order to relaxthe current density, cost increase cannot be avoided if the substrate 2(the whole chip) is enlarged for that purpose. Therefore, the ratio(referred to as an actual emission area ratio) occupied by thelight-emitting layer 4 in the substrate 2 is desirably enlarged byenlarging the light-emitting layer 4 in plan view without changing thesize (the chip size) of the substrate 2, and the light-emitting element1 according to the embodiment of the present invention has theaforementioned structure for that purpose.

In other words, the first electrode layer 10 and the first conductivitytype semiconductor layer 3 are separately arranged by holding thelight-emitting layer 4, the second conductivity type semiconductor layer5, the transparent electrode layer 6, the reflecting electrode layer 7and the insulating layer 8 therebetween in the light-emitting element 1,as shown in FIG. 2. Further, the first electrode layer 10 is connectedto the first conductivity type semiconductor layer 3 through theplurality of first contacts 11 discretely arranged in plan view.Therefore, current can be smoothly fed between the first electrode layer10 and the first conductivity type semiconductor layer 3 to an extentsimilar to that in a case where the first electrode layer 10 is directlystacked on the first conductivity type semiconductor layer 3.

As compared with the area of a contact portion between the firstelectrode layer 10 and the first conductivity type semiconductor layer 3in the case where the first electrode layer 10 is directly stacked onthe first conductivity type semiconductor layer 3, the total area of thecontact portions 18 between the plurality of discretely arranged firstcontacts 11 and the first conductivity type semiconductor layer 3 can besuppressed small. This is because the first contacts 11 are sodiscretely arranged that the current can be sufficiently dispersed tothe whole of the first conductivity type semiconductor layer 3. Thus,the light-emitting layer 4 can be inhibited from being corroded by thestructure for connecting the first electrode layer 10 and the firstconductivity type semiconductor layer 3 with each other. Therefore, thearea of the light-emitting layer 4 on the first conductivity typesemiconductor layer 3 can be enlarged in the light-emitting element 1,whereby the current density can be suppressed, and improvement of theluminous efficiency can be attained in response thereto.

As hereinabove described, the inventors have studied the structure(comparative example) of the exposed n-type semiconductor layer havingthe end region and the plurality of branch portions extending from theend region and the n electrode (having a plurality of branch portionssimilarly to the n-type semiconductor layer) arranged thereon bydeveloping the structure described in Patent Document 1. FIG. 11 showsthe relation between current density and luminous efficiency in thecomparative example with a broken line. In other words, a light-emittinglayer is remarkably corroded due to the arrangement of the branchportions of the n electrode in the structure of comparative example, andhence the area of the light-emitting layer diminishes, and the luminousefficiency deteriorates as a result.

Therefore, the inventors have further advanced the study to come to thestructure of the light-emitting element 1 according to the embodimenthaving the plurality of first contacts 11, and succeeded in uniformlybrightening the whole of the light-emitting layer 4 while enlarging thearea of the light-emitting layer 4 by applying the structure. FIG. 11shows a result of investigating the relation between current density andluminous efficiency as to Example corresponding to the structure of theembodiment with a solid line. From comparison of the two curves in FIG.11, it is understood that the luminous efficiency is improved in thewhole region of the current density. Further, the first electrode layer10 is not directly stacked on the first conductivity type semiconductorlayer 3 but stacked on the insulating layer 8, whereby it has beenpossible to enlarge the first electrode layer 10 without beinginfluenced by the light-emitting layer 4 on the first conductivity typesemiconductor layer 3.

According to the structure of the embodiment, the plurality of firstcontacts 11 are uniformly dispersively arranged in plan view (see FIG.1). Therefore, portions (the contact portions 18) for introducingcurrent into the first electrode layer 10 are uniformly distributed overa wide range on the first conductivity type semiconductor layer 3,whereby the current uniformly spreads over a wide range in thelight-emitting layer 4. Thus, the number of lucent portions in thelight-emitting layer 4 can be further increased, whereby furtherimprovement of the luminous efficiency of the light-emitting element 1can be attained. Further, the current can be smoothly fed from the firstconductivity type semiconductor layer 3 toward the side of the firstelectrode layer 10 through the introducing portions uniformlydistributed over the wide range.

Referring to FIG. 1, the plurality of first contacts are so arrangedthat the interval (the aforementioned intervals C and D) between onefirst contact 11 and another first contact 11 closest to the firstcontact 11 is constant, in order to uniformly dispersively arrange theplurality of first contacts 11 in plan view.

The plurality of first contacts 11 include the first edge-side contacts11A arranged along the edges (the longitudinal edges 10A and theshort-side edges 10B) of the first electrode layer 10 in plan view,whereby the introducing portions (the contact portions 18 in FIG. 2) arearranged at least on the edge sides in the first conductivity typesemiconductor layer 3, in response to the first edge-side contacts 11A.Thus, the current can be spread up to the edge sides in thelight-emitting layer 4 on the first conductivity type semiconductorlayer 3. Therefore, the number of lucent portions in the light-emittinglayer 4 can be increased, whereby improvement of the luminous efficiencyof the light-emitting element 1 can be attained.

The plurality of first contacts 11 include the second edge-side contacts11B arranged along the edge (the left short-side edge 10B in FIG. 1) ofthe first electrode layer 10 opposite to the side of the secondelectrode layer 12 in plan view, whereby the introducing portions arearranged at least on the side of the edge opposite to the side of thesecond electrode layer 12 in the first conductivity type semiconductorlayer 3, in response to the second edge-side contacts 11B. Thus, thecurrent can be spread up to the edge side opposite to the side of thesecond electrode layer 12 in the light-emitting layer 4 on the firstconductivity type semiconductor layer 3. Therefore, the number of lucentportions in the light-emitting layer 4 can be increased, wherebyimprovement of the luminous efficiency of the light-emitting element 1can be attained.

The contact portions 18 of the first contacts 11 with respect to thefirst conductivity type semiconductor layer 3 are in the form ofcircles, whereby the current can be incorporated over the wholeperipheries of the circles in the contact portions 18, i.e., theintroducing portions. Thus, the current can be smoothly fed from thefirst conductivity type semiconductor layer 3 to the first contacts 11.

The sum (the total first contact area) of the areas of the contactportions 18 of all first contacts 11 with respect to the firstconductivity type semiconductor layer 3 is not less than 3000 μm² andnot more than 25000 μm².

FIG. 12 is a graph showing the relation between the total first contactarea and forward voltage (VF). As shown in FIG. 12, the forward voltage(VF) in the light-emitting element 1 lowers as the total first contactarea increases, and the forward voltage becomes generally constant whenthe total first contact area is not less than 3000 μm². In other words,it is understood that the forward voltage VF tends to be saturated inthe range where the total first contact area is not less than 3000 μm²,while resistance in the contact portions 18 diminishes and the currenteasily flows when enlarging the total first contact area.

FIG. 13 is a graph showing the relation between the total first contactarea and the luminous efficiency. As shown in FIG. 13, the luminousefficiency of the light-emitting element 1 improves as the total firstcontact area increases, and the luminous efficiency becomes generallyconstant at the maximum value when the total first contact area is notless than 3000 μm². When the first contact area exceeds 25000 μm², onthe other hand, influence exerted by reduction (narrowing) of the areaof the light-emitting layer 4 enlarges, and the luminous efficiencylowers.

Thus, improvement of the luminous efficiency can be attained whilelowering the forward voltage VF by setting the total first contact areanot less than 3000 μm² and not more than 25000 μm² in the light-emittingelement 1.

Referring to FIG. 2, the first electrode layer 10 is in contact with theinsulating layer 8 and has the first contacts 11, and constitutes thesecond reflecting electrode layer reflecting light transmitted throughthe insulating layer 8. Therefore, light-reflecting efficiency can beimproved by reflecting light not reflected by the reflecting electrode 7stacked on the transparent electrode layer 6 but transmitted through theinsulating layer 8 on the first electrode layer 10, whereby improvementof the luminous efficiency of the light-emitting element 1 can beattained.

The insulating layer 8 covers the end surfaces 4A of the light-emittinglayer 4 exposed from between the first conductivity type semiconductorlayer 3 and the second conductivity type semiconductor layer 5, wherebylight can be prevented from leaking out of the end surfaces 4A of thelight-emitting layer 4 when the light-emitting layer 4 emits the light.Thus, improvement of the luminous efficiency of the light-emittingelement 1 can be attained.

In the light-emitting element 1 according to the embodiment of thepresent invention, the light-emitting layer 4 is so enlarged (widened inplan view) that the aforementioned actual emission area ratio reachesabout 79%, for example. In the light-emitting element according to theaforementioned comparative example prepared by improving the structureaccording to Patent Document 1, the actual emission area ratio is about63%, for example. Therefore, it has been possible to improve the actualemission area ratio by about 16% with respect to comparative example.Thus, the luminous efficiency has improved by about 1% in the whole areaof the current density, as shown in the solid line (Example) in FIG. 11.Current density at a time of applying about 100 mA to the light-emittingelement according to the aforementioned comparative example is 300mA/mm², for example, and luminous efficiency is about 28% (a point A inFIG. 11). In the light-emitting element 1 according to Example to whichthe embodiment is applied, on the other hand, current density at a timeof applying the same current has been relaxed up to about 200 mA/mm²,for example, and the luminous efficiency has risen up to about 31%, asshown at a point B in FIG. 11.

FIG. 14 is a schematic plan view of a light-emitting element accordingto a first modification. FIG. 15 is a schematic plan view of alight-emitting element according to a second modification.

As shown in FIG. 14, first contacts 11 may include only first edge-sidecontacts 11A arranged along longitudinal edges 10A of a first electrodelayer 10 in plan view.

As shown in FIG. 15, first contacts 11 may be arranged in astaggeredmanner in plan view. In this case, first edge-side contacts 11Aalong longitudinal edges 10A of a first electrode layer 10 are arrangedin line on the aforementioned second array lines B, and remaining firstcontacts 11 are arranged in line on the aforementioned third array linesE.

In either case of FIGS. 14 and 15, the first contacts 11 are arranged tobe point-symmetrical with respect to (the center of symmetry of) thelocation G of the center of gravity of the first electrode layer 10.

In addition to the above description, however, the arrangement of thefirst contacts 11 is properly changeable, and the first contacts 11 maynot be arranged to be point-symmetrical with respect to (the center ofsymmetry of) the location G of the center of gravity, for example. Inthis case, second edge-side contacts 11B along the short-side edge 10Bon the side farther from the second electrode 12 are preferably at leastarranged on the first electrode layer 10, in order to widely spreadcurrent in the light-emitting layer 4.

In addition to the above, the present invention can take variousembodiments. While such an example that the first contacts 11 havecolumnar shapes has been shown in the aforementioned embodiment, thefirst contacts 11 may be in the form of polygonal prisms. Further,normal-sectional shapes of the first contacts 11 may not be uniformalong the axial direction, but the first contacts 11 may be so designedthat sectional areas enlarge as separating from the contact portions 18,for example. While such an example that the first conductivity type isthe n-type and the second conductivity type is the p-type has beendescribed in the above embodiment, the light-emitting element may beconstituted while setting the first conductivity type to the p-type andsetting the second conductivity type to the n-type. In other words, astructure reversing the conductivity types between the p-type and then-type in the aforementioned embodiment is also one embodiment of thepresent invention. While GaN has been illustrated as the nitridesemiconductor in the aforementioned embodiment, another nitridesemiconductor such as aluminum nitride (AlN) or indium nitride (InN) maybe employed. A nitride semiconductor can be generally expressed asAl_(x)In_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1 and 0≦x+y≦1). Further, thesemiconductor is not restricted to the nitride semiconductor, but thepresent invention may be applied to a light-emitting element employinganother compound semiconductor such as GaAs or the like or asemiconductor material (diamond, for example) other than the compoundsemiconductor.

DESCRIPTION OF THE REFERENCE NUMERALS

-   -   1 light-emitting element    -   2 substrate    -   3 first conductivity type semiconductor layer    -   4 light-emitting layer    -   4A end surface    -   5 second conductivity type semiconductor layer    -   6 transparent electrode layer    -   7 reflecting electrode layer    -   8 insulating layer    -   9 insulating tube layer    -   10 first electrode layer    -   10A longitudinal edge    -   10B short-side edge    -   11 first contact    -   11A first edge-side contact    -   11B second edge-side contact    -   12 second electrode layer    -   13 second contact    -   14 etching stopper layer    -   16 bonding layer    -   18 contact portion    -   50 submount    -   64 light-emitting element unit    -   70 light-emitting element package    -   71 resin package    -   C interval    -   D interval    -   F interval    -   G location of center of gravity

1. A light-emitting element comprising: a first conductivity typesemiconductor layer; a light-emitting layer stacked on the firstconductivity type semiconductor layer; a second conductivity typesemiconductor layer stacked on the light-emitting layer; a transparentelectrode layer, stacked on the second conductivity type semiconductorlayer, transparent with respect to the emission wavelength of thelight-emitting layer; a reflecting electrode layer, stacked on thetransparent electrode layer, reflecting light transmitted through thetransparent electrode layer; an insulating layer stacked on thereflecting electrode layer; a first electrode layer stacked on theinsulating layer; a second electrode layer stacked on the insulatinglayer in a state isolated from the first electrode layer; a plurality ofinsulating tube layers, discretely arranged in plan view as viewed fromthe thickness direction of the first conductivity type semiconductorlayer, passing through the reflecting electrode layer, the transparentelectrode layer, the second conductivity type semiconductor layer andthe light-emitting layer continuously from the insulating layer andreaching the first conductivity type semiconductor layer; firstcontacts, continuous from the first electrode layer, connected to thefirst conductivity type semiconductor layer through the insulating layerand the insulating tube layers; and second contacts, continuous from thesecond electrode layer, passing through the insulating layer to beconnected to the reflecting electrode layer.
 2. The light-emittingelement according to claim 1, wherein the plurality of first contactsare uniformly dispersively arranged in the plan view.
 3. Thelight-emitting element according to claim 2, wherein the plurality offirst contacts are so arranged that the interval between one firstcontact and another first contact closest to the first contact isconstant.
 4. The light-emitting element according to claim 3, whereinthe interval is not less than 50 μm and not more than 150 μm.
 5. Thelight-emitting element according to claim 2, wherein the plurality offirst contacts are arranged in the form of a matrix.
 6. Thelight-emitting element according to claim 1, wherein the plurality offirst contacts are arranged to be point-symmetrical with respect to thelocation of the center of gravity of the first electrode layer in theplan view.
 7. The light-emitting element according to claim 1, whereinthe plurality of first contacts include a first edge-side contactarranged along an edge of the first electrode layer in the plan view. 8.The light-emitting element according to claim 7, wherein the pluralityof first contacts include a second edge-side contact arranged along anedge of the first electrode layer opposite to the side of the secondelectrode layer in the plan view.
 9. The light-emitting elementaccording to claim 1, wherein contact portions of the first contactswith respect to the first conductivity type semiconductor layer havecircular shapes.
 10. The light-emitting element according to claim 9,wherein the diameter of the contact portions is not less than 20 μm andnot more than 40 μm.
 11. The light-emitting element according to claim9, wherein the first contacts have columnar shapes.
 12. Thelight-emitting element according to claim 1, wherein the sum of theareas of the contact portions of all first contacts with respect to thefirst conductivity type semiconductor layer is not less than 3000 μm²and not more than 25000 μm².
 13. The light-emitting element according toclaim 1, wherein the insulating layer is made of SiN.
 14. Thelight-emitting element according to claim 1, wherein the reflectingelectrode layer is made of an alloy containing silver, a platinum groupmetal and copper.
 15. The light-emitting element according to claim 14,wherein the platinum group metal is platinum or palladium.
 16. Thelight-emitting element according to claim 1, wherein the transparentelectrode layer is made of ITO.
 17. The light-emitting element accordingto claim 1, wherein the first electrode layer includes: a secondreflecting electrode layer, in contact with the insulating layer andhaving the first contacts, reflecting light transmitted through theinsulating layer.
 18. The light-emitting element according to claim 17,wherein the second reflecting electrode layer is made of Al.
 19. Thelight-emitting element according to claim 1, further comprising asubstrate, transparent with respect to the emission wavelength of thelight-emitting layer, on which the first conductivity type semiconductorlayer is stacked.
 20. The light-emitting element according to claim 1,wherein the first conductivity type semiconductor layer and the secondconductivity type semiconductor layer are made of nitridesemiconductors.
 21. The light-emitting element according to claim 1,wherein the insulating layer covers an end surface of the light-emittinglayer exposed from between the first conductivity type semiconductorlayer and the second conductivity type semiconductor layer.
 22. Thelight-emitting element according to claim 1, further comprising anetching stopper layer, stacked on the reflecting electrode layer,arranged between the reflecting electrode layer and the second contacts.23. The light-emitting element according to claim 1, further comprisingbonding layers stacked on the respective ones of the first electrodelayer and the second electrode layer.
 24. The light-emitting elementaccording to claim 23, wherein the bonding layers are made of AuSn. 25.A light-emitting element unit comprising: the light-emitting elementaccording to claim 23; and a submount bonded to the bonding layers. 26.A light-emitting element package comprising the light-emitting elementunit according to claim 25 and a resin package storing thelight-emitting element unit.